BJT Transistor Bias Voltage Calculator

Enter value and click on calculate. Result will be displayed.

Enter your values:

Base Bias Type:
Volts


Rb = Base Resistance
Vin = Input Voltage
Rc = Collector Resistance
Re = Emitter Resistance
Vs = Supply Voltage
Vc = Collector Voltage
Ve = Emitter Voltage
Vb = Base Voltage
`I_b=[V_i n-Base t o Emitter Drop]/[R_b+Curren t gai n×R_e] `
Ic = Collector gain x Ib
Ve = IC x Re
Vb = Ve x Base to Emitter Drop
Vc = Vs - IC x Rc
If (Vc < Ve) then,
`V_e=[V_s×R_e]/[R_e+R_c] `
Vc = Ve
Vb = Ve + Base to Emitter Drop
`I_c=V_s/[R_e+R_c] `

Base Resistance (Rb):
K Ohms
Input Voltage (Vin):
Volts
Collector Resistance (Rc):
K ohms
Emitter Resistance (Re):
K ohms
Supply Voltage (Vs):
Volts
Current gain:
Base to Emitter Drop:
Volts

Result:

Collector Voltage (Vc):
Volts
Emitter Voltage (Ve):
Volts
Base Voltage (Vb):
Volts
Collector Voltage (Ic):
mA
Base Voltage (Ib):
mA
BJT Transistor Biasing Calculator

A Bipolar Junction Transistor (BJT) was invented in December 1947 at the Bell Telephone Laboratories by John Bardeen and Walter Brattain under the direction of William Shockley.

A Bipolar Junction Transistor is a solid-state device in which the current flow between two terminals (the collector and the emitter) is controlled by the amount of current that flows through a third terminal (the base).

A Bipolar Junction Transistor can be used for analog circuits, especially for very-high-frequency applications, such as radio-frequency circuits for wireless systems. Bipolar transistors can be combined with MOSFETs in an integrated circuit by using a BiCMOS process to create innovative circuits that take advantage of the best characteristics of both types of transistor.
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